Avalanche Technology and UMC Announce 22nm Production of High-Density MRAM-Based Devices for Aerospace Applications

Avalanche Technology, the leader in next generation MRAM technology, and United Microelectronics Corporation a leading semiconductor foundry, announced the immediate availability of new High-Reliability Persistent SRAM (P-SRAM) memory devices through UMC’s 22nm process technology. Based on Avalanche Technology’s latest generation of Spin Transfer Torque Magnetoresistive RAM (STT-MRAM) technology, this much anticipated third generation product platform offers significant density, endurance, reliability and power benefits over existing non-volatile solutions.

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“We are pleased to work with a technology leader like Avalanche Technology to bring this stand-alone memory solution into production. This is an important project to help commercialize robust and highly scalable MRAM solutions for the industry”

“With this new product release, Avalanche Technology is bringing to market standard products that are truly enabling a variety of applications that require high endurance, reliability and density, but without the need for external batteries, ECC or wear leveling,” said Danny Sabour, Vice President of Marketing and Business Development at Avalanche Technology. “The increased ubiquity of sensors constantly recording data and high transaction applications require highly endurant memory that doesn’t wear out. We will also soon be launching development efforts to raise the bar even further toward 16Gb monolithic solutions.”

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“We are pleased to work with a technology leader like Avalanche Technology to bring this stand-alone memory solution into production. This is an important project to help commercialize robust and highly scalable MRAM solutions for the industry,” said G C Hung, Vice President of the Result Delivery Office and Research Development at UMC. “With our comprehensive foundry technology portfolio and focus on manufacturing excellence, UMC is well positioned to serve the growing demand for persistent memory through Avalanche Technology’s powerful solutions.”

“Avalanche Technology has intensively developed our innovative perpendicular Magnetic Tunnel Junctions (pMTJ) based STT MRAM technology since 2006. Our industry leading pMTJ and CMOS designs are enabling the most advanced high-density and high-performance STT MRAM products, which are now available through our foundry partner UMC,” said Yiming Huai, Chief Technology Officer and Vice President of Technology & Foundry Business at Avalanche Technology.

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