Weebit Nano Limited, a leading developer of next-generation memory technologies for the global semiconductor industry, will publicly demonstrate its ReRAM IP module for the first time at a leading industry event, highlighting its technology’s real-world capability as a non-volatile memory (NVM) integrated into an actual subsystem.
The Interactive demonstration at the Leti Innovation Days event will show Weebit ReRAM functioning as an NVM memory block, being fed live images and retaining this data while powered-off, then displaying the data separately. The demonstration will also show the speed of the ReRAM module, clearly highlighting its faster write speed compared to typical flash memory technology. The Direct Program/Erase capability and byte addressability of Weebit ReRAM contribute to its faster write throughput time compared to flash, which needs to access entire data sectors every time it erases/writes.
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Coby Hanoch, CEO of Weebit Nano, said: “This is the first time we are publicly demonstrating our ReRAM embedded in silicon, less than a year after taping out the module. The demo of our ReRAM technology represents yet another key technical milestone as we progress toward full productization. The demo will be a great asset for use in our sales activities with potential customers.”
The demo is based on Weebit’s embedded ReRAM module that includes the ReRAM array, control logic, decoders, IOs (Input/Output communication elements) and error correcting code (ECC) as well as patent-pending analog and digital smart circuitry running smart algorithms which significantly enhance the memory array’s technical parameters.
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