Artificial Intelligence | News | Insights | AiThority
Bitcoin
$11,726.92
+169.52
(+1.47%)
Ethereum
$422.67
+29.19
(+7.42%)
Ripple
$0.29
+0.01
(+3.96%)
Litecoin
$56.35
+1.84
(+3.38%)
EOS
$3.11
+0.08
(+2.47%)
Cardano
$0.14
-0
(-0.57%)
Stellar
$0.10
-0
(-0.49%)
NEO
$15.03
+0.9
(+6.37%)
NEM
$0.06
0
(+0.96%)
DigitalCash
$92.03
+1.61
(+1.78%)
Tether
$1.00
0
(+0.2%)
Binance Coin
$21.46
+0.03
(+0.14%)
QTUM
$2.86
+0.09
(+3.37%)
Verge
$0.01
-0
(-6.06%)
Ontology
$0.82
+0.01
(+1.2%)
ZCash
$84.67
+4.2
(+5.22%)
Steem
$0.23
+0.01
(+3.37%)

Samsung to Advance High Performance Computing Systems with Launch of Industry’s First 3rd-Generation (16GB) HBM2E

0 3

New HBM2E stacks eight 16Gb DRAM dies to achieve 16GB package capacity and ensures a stable data transfer speed at 3.2Gbps

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, announced the market launch of ‘Flashbolt’, its third-generation High Bandwidth Memory 2E (HBM2E). The new 16-gigabyte (GB) HBM2E is uniquely suited to maximize high performance computing (HPC) systems and help system manufacturers to advance their supercomputers, AI-driven data analytics and state-of-the-art graphics systems in a timely manner.

“With the introduction of the highest performing DRAM available today, we are taking a critical step to enhance our role as the leading innovator in the fast-growing premium memory market”

“With the introduction of the highest performing DRAM available today, we are taking a critical step to enhance our role as the leading innovator in the fast-growing premium memory market,” said Cheol Choi, executive vice president of Memory Sales & Marketing at Samsung Electronics. “Samsung will continue to deliver on its commitment to bring truly differentiated solutions as we reinforce our edge in the global memory marketplace.”

Recommended AI News: Artificial Intelligence Wades Through Murky MRO Inventory Data To Drive Down Costs with Better Business Decisions

Ready to deliver twice the capacity of the previous-generation 8GB HBM2 ‘Aquabolt’, the new Flashbolt also sharply increases performance and power efficiency to significantly improve next-generation computing systems. The 16GB capacity is achieved by vertically stacking eight layers of 10nm-class (1y) 16-gigabit (Gb) DRAM dies on top of a buffer chip. This HBM2E package is then interconnected in a precise arrangement of more than 40,000 ‘through silicon via’ (TSV) microbumps, with each 16Gb die containing over 5,600 of these microscopic holes.

Recommended AI News: Hushly’s SaaS Platform Develops Artificial Intelligence Technology for B2B Marketers

Samsung’s Flashbolt provides a highly reliable data transfer speed of 3.2 gigabits per second (Gbps) by leveraging a proprietary optimized circuit design for signal transmission, while offering a memory bandwidth of 410GB/s per stack. Samsung’s HBM2E can also attain a transfer speed of 4.2Gbps, the maximum tested data rate to date, enabling up to a 538GB/s bandwidth per stack in certain future applications. This would represent a 1.75x enhancement over Aquabolt’s 307GB/s.

Samsung expects to begin volume production during the first half of this year. The company will continue providing its second-generation Aquabolt lineup while expanding its third-generation Flashbolt offering, and will further strengthen collaborations with ecosystem partners in next-generation systems as it accelerates the transition to HBM solutions throughout the premium memory market.

Recommended AI News: Numerify Obtains Six New Patents in Artificial Intelligence (AI) and Automation

Leave A Reply

Your email address will not be published.

This site uses Akismet to reduce spam. Learn how your comment data is processed.